Researchers investigate properties of novel materials for electronics operating in extremely hot environments
Structures of AlGaN/GaN TLMs studied in this work. (a) Selectively regrown n++ ([Si]11020cm3) GaN contacts in the Ohmic region only with the different contributions of the contact resistances Rc, 1Rc, 2and Rc, 3 labeled. (b) Regrown n++ GaN over entire TLM region. (c) Ti/Al/Ni/Au alloyed contacts. Credit: Applied Physics Letters (2024). DOI: 10.1063/5.0191297 The scorching … Read more